JPS6128372B2 - - Google Patents

Info

Publication number
JPS6128372B2
JPS6128372B2 JP55069232A JP6923280A JPS6128372B2 JP S6128372 B2 JPS6128372 B2 JP S6128372B2 JP 55069232 A JP55069232 A JP 55069232A JP 6923280 A JP6923280 A JP 6923280A JP S6128372 B2 JPS6128372 B2 JP S6128372B2
Authority
JP
Japan
Prior art keywords
reaction tube
vapor phase
phase growth
gas
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55069232A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56166935A (en
Inventor
Hirokazu Myoshi
Masahiro Yoneda
Kazuo Ito
Kazuo Mizuguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6923280A priority Critical patent/JPS56166935A/ja
Priority to DE19813118848 priority patent/DE3118848C2/de
Publication of JPS56166935A publication Critical patent/JPS56166935A/ja
Publication of JPS6128372B2 publication Critical patent/JPS6128372B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Or Chemical Processes And Apparatus (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
JP6923280A 1980-05-12 1980-05-23 Apparatus for vapor growth under reduced pressure Granted JPS56166935A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP6923280A JPS56166935A (en) 1980-05-23 1980-05-23 Apparatus for vapor growth under reduced pressure
DE19813118848 DE3118848C2 (de) 1980-05-12 1981-05-12 Niederdruck-Beschichtungsvorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6923280A JPS56166935A (en) 1980-05-23 1980-05-23 Apparatus for vapor growth under reduced pressure

Publications (2)

Publication Number Publication Date
JPS56166935A JPS56166935A (en) 1981-12-22
JPS6128372B2 true JPS6128372B2 (en]) 1986-06-30

Family

ID=13396775

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6923280A Granted JPS56166935A (en) 1980-05-12 1980-05-23 Apparatus for vapor growth under reduced pressure

Country Status (1)

Country Link
JP (1) JPS56166935A (en])

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6067673A (ja) * 1983-09-22 1985-04-18 Semiconductor Energy Lab Co Ltd プラズマ気相反応方法
US4657616A (en) * 1985-05-17 1987-04-14 Benzing Technologies, Inc. In-situ CVD chamber cleaner
US4786352A (en) * 1986-09-12 1988-11-22 Benzing Technologies, Inc. Apparatus for in-situ chamber cleaning

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6029295B2 (ja) * 1979-08-16 1985-07-10 舜平 山崎 非単結晶被膜形成法

Also Published As

Publication number Publication date
JPS56166935A (en) 1981-12-22

Similar Documents

Publication Publication Date Title
JPH0645261A (ja) 半導体気相成長装置
JPH0377655B2 (en])
KR100467082B1 (ko) 반도체소자 제조장치 및 그 클리닝방법
JPS6128372B2 (en])
JP2000260721A (ja) 化学的気相成長装置、化学的気相成長方法および化学的気相成長装置のクリーニング方法
JP3631903B2 (ja) プラズマ化学蒸着装置
JPH0231423A (ja) パターン化誘電体層生成プロセス
JPH07283292A (ja) シール機構並びにこのシール機構を用いた処理装置及び処理方法
JP2547035B2 (ja) プラズマ処理装置
JP3259452B2 (ja) プラズマcvd装置に用いる電極及びプラズマcvd装置
JPH01188678A (ja) プラズマ気相成長装置
JP2717185B2 (ja) 熱処理装置のクリーニング方法
JPH0754801B2 (ja) 半導体装置製造装置およびその反応管内部の洗浄方法
KR20070026119A (ko) 기상반응 처리장치
JPS5941773B2 (ja) 気相成長方法及び装置
JPS62218577A (ja) 気相反応装置用電極
JPS62203330A (ja) 反応管洗浄手段を備えた半導体熱処理装置
JPH0214523A (ja) プラズマ処理方法
JPH0891987A (ja) プラズマ化学蒸着装置
JP4570186B2 (ja) プラズマクリーニング方法
JP2721847B2 (ja) プラズマ処理方法及び縦型熱処理装置
JPS607133A (ja) プラズマcvd装置
JPS6140770Y2 (en])
JPS643338B2 (en])
JP2721846B2 (ja) 縦型熱処理装置及び縦型熱処理装置による処理方法